- Type Designator: 2N2222
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 0.5
- Maximum collector-base voltage Ucb, V: 60
- Maximum collector-emitter voltage Uce, V: 30
- Maximum emitter-base voltage Ueb, V: 5
- Maximum collector current Ic max, A: 0.8
- Maksimalna temperatura (Tj), °C: 175
- Transition frequency (ft), MHz: 250
- Type Designator: 2N2222
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 0.5
- Maximum collector-base voltage Ucb, V: 60
- Maximum collector-emitter voltage Uce, V: 30
- Maximum emitter-base voltage Ueb, V: 5
- Maximum collector current Ic max, A: 0.8
- Maksimalna temperatura (Tj), °C: 175
- Transition frequency (ft), MHz: 250
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